Disentangling the effects of nanoscale structural variations on the light emission wavelength of single nano-emitters: InGaN/GaN multiquantum well nano-LEDs for a case study.

The scattering in the light emission wavelength of semiconductor nano-emitters assigned to nanoscale variations in strain, thickness, and composition is critical in current and novel nanotechnologies from highly efficient light sources to photovoltaics. Here, we present a correlated experimental and theoretical study of single nanorod light emitting diodes (nano-LEDs) based on InGaN/GaN multiquantum wells to separate the contributions of these intrinsic fluctuations. Cathodoluminescence measurements show that nano-LEDs with identical strain states probed by non-resonant micro-Raman spectroscopy can radiate light at different wavelengths. The deviations in the measured optical transitions agree very well with band profile calculations for quantum well thicknesses of 2.07-2.72 nm and In fractions of 17.5-19.5% tightly enclosing the growth values. The nanorod surface roughness controls the appearance of surface optical phonon modes with direct implications on the design of phonon assisted nano-LED devices. This work establishes a new, simple, and powerful methodology for fundamental understanding as well as quantitative analysis of the strain - light emission relationship and surface-related phenomena in the emerging field of nano-emitters.